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NVSim-CAM: A circuit-level simulator for emerging nonvolatile memory based Content-Addressable Memory

2016 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)Nov 2016 Pages 1–7https://doi.org/10.1145/2966986.2967059
Published:07 November 2016Publication History
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2016 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)

NVSim-CAM: A circuit-level simulator for emerging nonvolatile memory based Content-Addressable Memory
Pages 1–7
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ABSTRACT

Ternary Content-Addressable Memory (TCAM) is widely used in networking routers, fully associative caches, search engines, etc. While the conventional SRAM-based TCAM suffers from the poor scalability, the emerging nonvolatile memories (NVM, i.e., MRAM, PCM, and ReRAM) bring evolution for the TCAM design. It effectively reduces the cell size, and makes significant energy reduction and scalability improvement. New applications such as associative processors/accelerators are facilitated by the emergence of the nonvolatile TCAM (nvTCAM). However, nvTCAM design is challenging. In addition to the emerging device's uncertainty, the nvTCAM cell structure is so diverse that it results in a design space too large to explore manually. To tackle these challenges, we propose a circuit-level model and develop a simulation tool, NVSim-CAM, which helps researchers to make early design decisions, and to evaluate device/circuit innovations. The tool is validated by HSPICE simulations and data from fabricated chips. We also present a case study to illustrate how NVSim-CAM benefits the nvTCAM design. In the case study, we propose a novel 3D vertical ReRAM based TCAM cell, the 3DvTCAM. We project the advantages/disadvantages and explore the design space for the proposed cell with NVSim-CAM.

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    2016 IEEE/ACM International Conference on Computer-Aided Design (ICCAD)
    Nov 2016
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